类型 | 描述 |
---|---|
系列: | FL-S |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 128Mb (16M x 8) |
内存接口: | SPI - Quad I/O |
时钟频率: | 133 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 105°C (TA) |
安装类型: | Surface Mount |
包/箱: | 16-SOIC (0.295", 7.50mm Width) |
供应商设备包: | 16-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
93L415FMQBRochester Electronics |
STANDARD SRAM, 1KX1, 70NS, TTL |
|
GD25Q64CSIGGigaDevice |
IC FLASH 64MBIT SPI/QUAD 8SOP |
|
UPD44645364AF5-E33-FQ1Rochester Electronics |
STANDARD SRAM, 2MX36, 0.45NS |
|
DS1225AB-200IND+Maxim Integrated |
IC NVSRAM 64KBIT PARALLEL 28EDIP |
|
S34ML04G100TFI900Flip Electronics |
IC FLASH 4GBIT PARALLEL 48TSOP I |
|
AT25020B-MAHL-TRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 20MHZ 8UDFN |
|
AT24MAC602-XHM-TRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 1MHZ 8TSSOP |
|
71V416VS10BEIRochester Electronics |
IC SRAM 4MBIT PARALLEL 48CABGA |
|
IS42VM32160E-75BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 90TFBGA |
|
AS4C4M32D1A-5BINTRAlliance Memory, Inc. |
IC DRAM 128MBIT PAR 144LFBGA |
|
24LC025-E/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
71V67703S75BG8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
IS49RL18320-107BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 576MBIT PAR 168FCBGA |