类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, ZBT |
内存大小: | 144Mb (4M x 36) |
内存接口: | Parallel |
时钟频率: | 250 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.3V ~ 2.7V, 3V ~ 3.6V |
工作温度: | -40°C ~ 100°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (20x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS61LV256AL-10JLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
AS6C8016-55TINAlliance Memory, Inc. |
IC SRAM 8MBIT PARALLEL 48TSOP I |
|
70T3599S133BFI8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 208CABGA |
|
BR93G56FVT-3BGE2ROHM Semiconductor |
IC EEPROM 2K SPI 3MHZ 8TSSOP |
|
FM24C16UVM8XRochester Electronics |
IC EEPROM 16KBIT I2C 8SOIC |
|
S29GL01GS11TFV013Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 56TSOP |
|
CY7C027V-25AIRochester Electronics |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
MT58L256L36PT-7.5Rochester Electronics |
CACHE SRAM, 256KX36, 4NS PQFP100 |
|
71V416L10PHRochester Electronics |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
M95M04-DRMN6TPSTMicroelectronics |
IC EEPROM 4MBIT SPI 10MHZ 8SOIC |
|
MB85RC512TPNF-G-JNERE1Fujitsu Electronics America, Inc. |
IC FRAM 512KBIT I2C 3.4MHZ 8SOP |
|
CAT28F001N-90BRochester Electronics |
IC FLASH 1MBIT PARALLEL 32PLCC |
|
24LC04BH-I/STRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 8TSSOP |