English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q100, FL-L |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NOR |
| 内存大小: | 64Mb (8M x 8) |
| 内存接口: | SPI - Quad I/O, QPI |
| 时钟频率: | 108 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 24-TBGA |
| 供应商设备包: | 24-BGA (8x6) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CY7C1565XV18-633BZXCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
S29GL064N90TFI013Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 56TSOP |
|
71256L55DBRenesas Electronics America |
IC SRAM 256KBIT PAR 28CERDIP |
|
71256S70DBRenesas Electronics America |
IC SRAM 256KBIT PAR 28CERDIP |
|
24AA04-I/PRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 400KHZ 8DIP |
|
BR24T64NUX-WTRROHM Semiconductor |
IC EEPROM 64KBIT VSON008X2030 |
|
TC58BYG2S0HBAI4Toshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 4G PARALLEL 63TFBGA |
|
M28W320ECB70ZB6T TRMicron Technology |
IC FLASH 32MBIT PARALLEL 47TFBGA |
|
IS45S16800F-7CTLA2-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 54TSOP II |
|
MT25QU01GBBB8E12-0SIT TRMicron Technology |
IC FLSH 1GBIT SPI 166MHZ 24TPBGA |
|
25LC160C-E/MSRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 10MHZ 8MSOP |
|
S25HS512TFABHI010Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 24BGA |
|
S29GL01GS10TFA023Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 56TSOP |
