English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, QDR II |
| 内存大小: | 18Mb (1M x 18) |
| 内存接口: | Parallel |
| 时钟频率: | 200 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 1.7V ~ 1.9V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 165-LBGA |
| 供应商设备包: | 165-FBGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS45S16800F-7BLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 54TFBGA |
|
CY7C1612KV18-250BZXCRochester Electronics |
IC SRAM 144MBIT PARALLEL 165FBGA |
|
24C02CT-E/MSRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 100KHZ 8MSOP |
|
FM24C02ULZM8Rochester Electronics |
IC EEPROM 2KBIT I2C 100KHZ 8SO |
|
EDB2432B4MA-1DAAT-F-R TRMicron Technology |
IC DRAM 2GBIT PARALLEL 134VFBGA |
|
TC58NVG1S3HBAI6Toshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 2GBIT PARALLEL 67VFBGA |
|
SN74LS600ADWRochester Electronics |
MEMORY CIRCUIT, 16KX1, TTL |
|
CY7C1413JV18-250BZIRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
W25Q64JWZPIM TRWinbond Electronics Corporation |
IC FLASH 64MBIT SPI/QUAD 8WSON |
|
CY15B064J-SXATCypress Semiconductor |
IC FRAM 64KBIT I2C 1MHZ 8SOIC |
|
MX25U1633FM2IMacronix |
IC FLSH 16MBIT SPI/QUAD I/O 8SOP |
|
GS8342D18BGD-300IGSI Technology |
IC SRAM 36MBIT PARALLEL 165FPBGA |
|
M28W160CT70N6EFlip Electronics |
IC FLASH 16MBIT PARALLEL 48TSOP |
