类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR (ZBT) |
内存大小: | 18Mb (512K x 36) |
内存接口: | Parallel |
时钟频率: | 133 MHz |
写周期时间 - 字,页: | - |
访问时间: | 4.2 ns |
电压 - 电源: | 2.375V ~ 2.625V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 119-BGA |
供应商设备包: | 119-PBGA (14x22) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S25FS064SAGNFI033Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 8LGA |
|
CY7C1480BV33-250BZICypress Semiconductor |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
CAT24C03TDGI-T3Rochester Electronics |
IC EEPROM 2KBIT I2C TSOT23-5 |
|
24AA515T-I/SMRoving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 8SOIJ |
|
CY7C1568KV18-500BZXIRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
CY62156HSL-45BVXICypress Semiconductor |
IC SRAM 8MBIT PARALLEL 48VFBGA |
|
CY7C1354S-200BGCRochester Electronics |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
GD25Q256DYIGRGigaDevice |
IC FLASH 256MBIT SPI/QUAD 8WSON |
|
RMLV1616AGSA-5S2#KA0Renesas Electronics America |
IC SRAM 16MBIT PARALLEL 48TSOP I |
|
S-24C32CI-T8T1U3ABLIC U.S.A. Inc. |
IC EEPROM 32KBIT I2C 8TSSOP |
|
IS61NLP204818B-200TQLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 100LQFP |
|
CAT24WC66WI-GT3Rochester Electronics |
IC EEPROM 64KBIT I2C 8SOIC |
|
25LC040AT-E/OTRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI SOT23-6 |