类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Not For New Designs |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 64Kb (8K x 8) |
内存接口: | I²C |
时钟频率: | 400 kHz |
写周期时间 - 字,页: | 10ms |
访问时间: | 900 ns |
电压 - 电源: | 1.8V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-TSSOP (0.173", 4.40mm Width) |
供应商设备包: | 8-TSSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS61WV25616EDALL-20BLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 48TFBGA |
|
28C64A-25B/UCRochester Electronics |
64K (8K X 8) CMOS EEPROM |
|
24LC16BH-I/PRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 400KHZ 8DIP |
|
W25X20CLSNIG TRWinbond Electronics Corporation |
IC FLASH 2MBIT SPI 104MHZ 8SOIC |
|
MT48H32M16LFB4-6 IT:CMicron Technology |
IC DRAM 512MBIT PARALLEL 54VFBGA |
|
71V3579S65PFGRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
MT25QU512ABB8ESF-0SIT TRMicron Technology |
IC FLASH 512MBIT SPI 133MHZ 16SO |
|
S29GL256S10DHI023Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
S29GL064S70FHI040Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 64FBGA |
|
IS62WV5128BLL-55TLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 32TSOP I |
|
AT25SF041B-SHB-TAdesto Technologies |
IC FLASH 4MBIT SPI/QUAD 8SOIC |
|
71V256SA12PZG8Rochester Electronics |
IC SRAM 256KBIT PARALLEL 28TSOP |
|
S25FL512SAGBHM210Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 24BGA |