类型 | 描述 |
---|---|
系列: | GL-T |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 512Mb (64M x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 60ns |
访问时间: | 120 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 125°C (TA) |
安装类型: | Surface Mount |
包/箱: | 56-TFSOP (0.724", 18.40mm Width) |
供应商设备包: | 56-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT25020B-MAHL-ERoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 20MHZ 8UDFN |
|
7164S45DBRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 28CERDIP |
|
MR0A08BCYS35REverspin Technologies, Inc. |
IC RAM 1MBIT PARALLEL 44TSOP2 |
|
11AA161-I/MSRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SGL WIRE 8MSOP |
|
N02L6181AB28IRochester Electronics |
IC SRAM 2MBIT PARALLEL 48BGA |
|
IS25WP064A-RHLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 64MBIT SPI/QUAD 24TFBGA |
|
CY62147CV18LL-70BAIRochester Electronics |
STANDARD SRAM, 256KX16, 70NS |
|
IS25LP256D-RHLEISSI (Integrated Silicon Solution, Inc.) |
IC FLSH 256MBIT SPI/QUAD 24TFBGA |
|
CY7C1049CV33-20VCRochester Electronics |
IC SRAM 4MBIT PARALLEL 36SOJ |
|
71V547S80PFGRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
XC68C812A4PV5Rochester Electronics |
16-BIT, EEPROM, 5MHZ, HCMOS |
|
IS43TR16128A-125KBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
|
70T3799MS133BBGIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 324PBGA |