English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 256Kb (32K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 10ms |
| 访问时间: | 90 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 32-LCC (J-Lead) |
| 供应商设备包: | 32-PLCC (13.97x11.43) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
71P72604S167BQGRochester Electronics |
18MBIT PIPELINED QDRII SRAM |
|
CY7C1415AV18-167BZCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
CY7C1049CV33-10ZIRochester Electronics |
STANDARD SRAM |
|
CY7C024-55JCRochester Electronics |
DUAL-PORT SRAM, 4KX16, 55NS |
|
25LC020AT-E/MSRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 10MHZ 8MSOP |
|
IS61NLF51218B-7.5TQLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 9MBIT PARALLEL 100LQFP |
|
IS66WVC4M16EALL-7010BLIISSI (Integrated Silicon Solution, Inc.) |
IC PSRAM 64MBIT PARALLEL 54VFBGA |
|
HM5-8808S-8Rochester Electronics |
8K X 8 MULTI DEVICE SRAM MODULE |
|
24AA02E64T-I/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
AS4C128M32MD2A-18BINAlliance Memory, Inc. |
IC DRAM 4GBIT PARALLEL 134FBGA |
|
71V416S15YRochester Electronics |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
IS61WV102416DBLL-10BLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 16MBIT PARALLEL 48TFBGA |
|
S25FL256SDPMFIG01Rochester Electronics |
IC FLASH 256MBIT SPI/QUAD 16SOIC |
