类型 | 描述 |
---|---|
系列: | Ferri-UFS ™ |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NAND (TLC) |
内存大小: | - |
内存接口: | UFS2.1 |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | - |
工作温度: | -40°C ~ 85°C |
安装类型: | Surface Mount |
包/箱: | 153-TFBGA |
供应商设备包: | 153-BGA (11.5x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
W25Q32JVSSIQWinbond Electronics Corporation |
IC FLASH 32MBIT SPI/QUAD 8SOIC |
|
CY7C1018CV33-12VCRochester Electronics |
STANDARD SRAM, 128KX8 |
|
GS8321Z36AGD-250IVGSI Technology |
IC SRAM 36MBIT PARALLEL 165FPBGA |
|
24LC04BT-I/STRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 8TSSOP |
|
24AA64-E/SNRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 8SOIC |
|
AS4C2M32SA-7TCNTRAlliance Memory, Inc. |
IC DRAM 64MBIT PAR 86TSOP II |
|
CY62147DV30LL-55BVITRochester Electronics |
STANDARD SRAM, 256KX16, 55NS |
|
CY27C010-120ZIRochester Electronics |
OTP ROM, 128KX8, 120NS PDSO32 |
|
IS42S32800G-7BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 90TFBGA |
|
MT25QU256ABA1EW9-0SIT TRMicron Technology |
IC FLASH 256MBIT SPI 8WPDFN |
|
CY7C1381BV25-100ACRochester Electronics |
STANDARD SRAM, 512KX36, 8.5NS |
|
IS42S83200J-7TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
93AA76C-I/MSRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 3MHZ 8MSOP |