类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 4Mb (512K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 25ns |
访问时间: | 25 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 32-SOIC (0.445", 11.30mm Width) |
供应商设备包: | 32-SOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BR24G32NUX-3TTRROHM Semiconductor |
IC EEPROM 32KBIT VSON008X2030 |
|
S29GL256S11DHVV23Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
S25FL132K0XMFI013Flip Electronics |
IC FLASH 32MBIT SPI/QUAD 8SOIC |
|
CY7C1020B-12VXCTRochester Electronics |
IC SRAM 512KBIT PARALLEL 44SOJ |
|
SST26WF040BAT-104I/NPRoving Networks / Microchip Technology |
IC FLASH 4MBIT SPI/QUAD 8USON |
|
93LC46AT-E/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8SOIC |
|
MX25L25735FMI-10GMacronix |
IC FLSH 256MBIT SPI 104MHZ 16SOP |
|
S26KS128SDGBHM030Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 24FBGA |
|
CY7C1021CV26-15ZSXECypress Semiconductor |
NO WARRANTY |
|
74F219SJRochester Electronics |
STANDARD SRAM, 16X4, 27NS, TTL |
|
AS4C32M16D2A-25BINAlliance Memory, Inc. |
IC DRAM 512MBIT PARALLEL 84FBGA |
|
S29GL256S90TFI023Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 56TSOP |
|
71024S20YGRochester Electronics |
IC SRAM 1MBIT PARALLEL 32SOJ |