类型 | 描述 |
---|---|
系列: | HyperFlash™ KS |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 256Mb (32M x 8) |
内存接口: | Parallel |
时钟频率: | 166 MHz |
写周期时间 - 字,页: | - |
访问时间: | 96 ns |
电压 - 电源: | 1.7V ~ 1.95V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 24-VBGA |
供应商设备包: | 24-FBGA (6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
70V657S12BF8Renesas Electronics America |
IC SRAM 1.125MBIT PAR 208CABGA |
|
71V016SA12YIRochester Electronics |
IC SRAM 1MBIT PARALLEL 44SOJ |
|
71V65603S133BQGIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
CY7C1041BV33-15VCTRochester Electronics |
STANDARD SRAM, 256KX16, 15NS |
|
71V2546S100PFRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
CY7C1049BN-15VXCRochester Electronics |
STANDARD SRAM, 512KX8, 15NS |
|
S29AL016J70TFN020Cypress Semiconductor |
IC FLASH 16MBIT PARALLEL 48TSOP |
|
R1LV5256ESP-7SR#S0Rochester Electronics |
IC SRAM 256KBIT PARALLEL 28SOP |
|
70V7519S133BFIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 208CABGA |
|
11AA010-I/MSRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SGL WIRE 8MSOP |
|
MR5A16AUMA45Everspin Technologies, Inc. |
IC RAM 32MBIT PARALLEL 48FBGA |
|
R1LP0108ESF-5SI#B1Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 32TSOP |
|
S29GL064S80BHV030Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 48FBGA |