类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 256Kb (32K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 15ns |
访问时间: | 15 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 28-BSOJ (0.300", 7.62mm Width) |
供应商设备包: | 28-SOJ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S29GL01GS11FHIV10Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 64FBGA |
|
24FC16-E/PRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 1MHZ 8DIP |
|
SST25VF512A-33-4I-SAE-TRoving Networks / Microchip Technology |
IC FLASH 512KBIT SPI 33MHZ 8SOIC |
|
24LC16BH-I/MSRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 8MSOP |
|
S25FL064LABBHB030Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 24BGA |
|
93C56C-I/MSRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 3MHZ 8MSOP |
|
BR25G256FJ-3GE2ROHM Semiconductor |
IC EEPROM 256KBIT SPI 8SOPJ |
|
GS82582Q20GE-500IGSI Technology |
IC SRAM 288MBIT PAR 165FPBGA |
|
CY7C1021BN-15ZXCRochester Electronics |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
MT58L256L32FT-7.5Rochester Electronics |
CACHE SRAM, 256KX32, 7.5NS PQFP1 |
|
BR93A56RFVT-WME2ROHM Semiconductor |
IC EEPROM 2KBIT SPI 2MHZ 8TSSOPB |
|
AT45DB081E-SHN-BAdesto Technologies |
IC FLASH 8MBIT SPI 85MHZ 8SOIC |
|
AS6C1008-55PINAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 32DIP |