English
简体中文
LED COB VERO 29 2700K ROUND
TERM BLOCK 10POS 45DEG 5MM PCB
IC FLASH 512KBIT SPI 8UDFN
LED LAMP T-3 1/4 SCREW 12V MINI
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH |
| 内存大小: | 512Kb (64K x 8) |
| 内存接口: | SPI |
| 时钟频率: | 104 MHz |
| 写周期时间 - 字，页: | 8µs, 1.75ms |
| 访问时间: | - |
| 电压 - 电源: | 2.3V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-UFDFN Exposed Pad |
| 供应商设备包: | 8-UDFN (2x3) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS61LPS409618B-200TQLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 72MBIT PARALLEL 100LQFP |
|
11LC040-I/MSRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SGL WIRE 8MSOP |
|
TC58BVG1S3HBAI4Toshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 2GBIT 63TFBGA |
|
MT25QL01GBBB8ESF-0AATMicron Technology |
IC FLASH 1GBIT SPI 133MHZ 16SO |
|
S29GL512S10GHI010Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 56FBGA |
|
6116LA35DBRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 24CDIP |
|
M95160-RMC6TGSTMicroelectronics |
IC EEPROM 16KBIT SPI 8UFDFPN |
|
EDB5432BEBH-1DAUT-F-DMicron Technology |
IC DRAM 512MBIT PAR 134VFBGA |
|
S25FL129P0XMFV003Rochester Electronics |
FLASH, 16MX8, PDSO16 |
|
CY7C1356C-250AXCCypress Semiconductor |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
CY7C1021V33-15VCRochester Electronics |
STANDARD SRAM, 64KX16, 15NS |
|
S29GL256S90FHSS23Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
25LC080CT-H/SNRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 5MHZ 8SOIC |