English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, SDR |
| 内存大小: | 9Mb (256K x 36) |
| 内存接口: | Parallel |
| 时钟频率: | 250 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 2.8 ns |
| 电压 - 电源: | 3.135V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 100-LQFP |
| 供应商设备包: | 100-TQFP (14x20) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AS4C32M8D1-5TCNTRAlliance Memory, Inc. |
IC DRAM 256MBIT PAR 66TSOP II |
|
STK12C68-WF25Rochester Electronics |
NON-VOLATILE SRAM, 8KX8, 25NS PD |
|
MX25U3232FZNI02Macronix |
IC FLASH 32MBIT SPI/QUAD 8WSON |
|
MR25H40CDCREverspin Technologies, Inc. |
IC RAM 4MBIT SPI 40MHZ 8DFN |
|
34AA02T-I/MSRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8MSOP |
|
S70FL01GSAGMFM010Cypress Semiconductor |
IC FLASH 1GBIT SPI/QUAD 16SOIC |
|
S29GL256N11FAI010Flip Electronics |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
IS64WV10248EDBLL-10CTLA3ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 8MBIT PARALLEL 44TSOP II |
|
NM25C040ENRochester Electronics |
EEPROM, 512X8, SERIAL PDIP8 |
|
24LC64F-I/SNRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 8SOIC |
|
71024S12YG8Rochester Electronics |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
AT24C08BU3-UU-TRochester Electronics |
IC EEPROM 8KBIT I2C 1MHZ 8VFBGA |
|
70T3589S166BC8Renesas Electronics America |
IC SRAM 2MBIT PARALLEL 256CABGA |
