类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 256Kb (32K x 8) |
内存接口: | I²C |
时钟频率: | 400 kHz |
写周期时间 - 字,页: | 5ms |
访问时间: | 900 ns |
电压 - 电源: | 2.7V ~ 5.5V |
工作温度: | -40°C ~ 125°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
25LC1024-E/MFRoving Networks / Microchip Technology |
IC EEPROM 1MBIT SPI 20MHZ 8DFN |
|
IS62WV25616EALL-55BLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 48VFBGA |
|
93C46C-E/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 3MHZ 8SOIC |
|
24LC16BT-I/MCRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 400KHZ 8DFN |
|
MT40A256M16LY-062E AAT:FMicron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
BR25S128FV-WE2ROHM Semiconductor |
IC EEPROM 128K SPI 20MHZ 8SSOPB |
|
S29GL128S90FHSS50Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
BR93L66FV-WE2ROHM Semiconductor |
IC EEPROM 4KBIT SPI 2MHZ 8SSOPB |
|
71V3556SA133BGI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
CY7C1356C-166AXITRochester Electronics |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
IS43TR16128D-107MBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
|
HM5-8808-9Rochester Electronics |
8K X 8 MULTI DEVICE SRAM MODULE |
|
25LC640AT-E/SNRoving Networks / Microchip Technology |
IC EEPROM 64KBIT SPI 10MHZ 8SOIC |