类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 2Kb (256 x 8) |
内存接口: | I²C |
时钟频率: | 400 kHz |
写周期时间 - 字,页: | 5ms |
访问时间: | 900 ns |
电压 - 电源: | 1.7V ~ 5.5V |
工作温度: | -40°C ~ 125°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
供应商设备包: | 8-MSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
DS1245ABP-70+Rochester Electronics |
IC NVSRAM 1MBIT PARALLEL 20UCSP |
|
N25Q032A11EF640EFlip Electronics |
IC FLASH 32MBIT SPI 108MHZ 8PDFN |
|
71V65703S75BQGRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
S29GL256S90FHI010Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
AS7C256A-15TINTRAlliance Memory, Inc. |
IC SRAM 256KBIT PAR 28TSOP I |
|
IS43R16320D-5BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TFBGA |
|
25LC040AT-I/MCRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 10MHZ 8DFN |
|
SST39VF3201-70-4I-B3KE-TRoving Networks / Microchip Technology |
IC FLASH 32MBIT PARALLEL 48TFBGA |
|
S29GL128S10DHV013Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
IS42S32160F-6BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 90TFBGA |
|
IS46DR16640B-3DBLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 84TWBGA |
|
MT58L64L32PT-7.5TRRochester Electronics |
SRAM SYNC QUAD 2M-BIT 64KX32 |
|
DS1250ABP-100Rochester Electronics |
IC NVSRAM 4MBIT PAR 34PWRCAP |