类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 16Mb (512K x 32) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 10ns |
访问时间: | 10 ns |
电压 - 电源: | 2.4V ~ 2.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 119-BGA |
供应商设备包: | 119-PBGA (14x22) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BR24S32FV-WE2ROHM Semiconductor |
IC EEPROM 32KBIT I2C 8SSOPB |
|
RM25C256DS-LSNI-TAdesto Technologies |
IC CBRAM 256KBIT SPI 20MHZ 8SOIC |
|
CAT25320HU3IGT3CRochester Electronics |
IC EEPROM 32KBIT SPI 10MHZ 8UDFN |
|
SST26VF016-80-5I-S2AERoving Networks / Microchip Technology |
IC FLASH 16MBIT SPI/QUAD 8SOIC |
|
S29GL512T10FHI020Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64FBGA |
|
93LC66CT-I/STRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 3MHZ 8TSSOP |
|
GD25LQ80CSIGGigaDevice |
IC FLASH 8MBIT SPI/QUAD I/O 8SOP |
|
CY14B256KA-SP25XITCypress Semiconductor |
IC NVSRAM 256KBIT PAR 48SSOP |
|
W632GU6NB12IWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 96VFBGA |
|
S34ML08G101TFI200Flip Electronics |
IC FLASH 8GBIT PARALLEL 48TSOP I |
|
PCF85102C-2T/03118Rochester Electronics |
EEPROM 256X8 |
|
S25FS128SDSMFI1D3Cypress Semiconductor |
IC FLSH 128MBIT SPI/QUAD I/O 8SO |
|
CY14B108M-ZSP45XICypress Semiconductor |
NO WARRANTY |