类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Synchronous |
内存大小: | 4.5Mb (256K x 18) |
内存接口: | Parallel |
时钟频率: | 133 MHz |
写周期时间 - 字,页: | - |
访问时间: | 4.2 ns |
电压 - 电源: | 3.15V ~ 3.45V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 256-LBGA |
供应商设备包: | 256-CABGA (17x17) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT47H64M4BP-37E:B TRMicron Technology |
IC DRAM 256MBIT PARALLEL 60FBGA |
|
MT29F2G08ABAEAWP:E TRMicron Technology |
IC FLASH 2GBIT PARALLEL 48TSOP I |
|
24LCS52T-I/MSRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8MSOP |
|
BR25G640FJ-3GE2ROHM Semiconductor |
IC EEPROM 64KBIT SPI 20MHZ 8SOPJ |
|
FM16W08-SGRochester Electronics |
FRAM MEMORY, 8KX8 PDSO28 |
|
AS7C34098A-10JINTRAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
CY62168GE30-45BVXICypress Semiconductor |
IC SRAM 16MBIT PARALLEL 48VFBGA |
|
AS7C256A-15JCNTRAlliance Memory, Inc. |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
S29GL512T12DHN023Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64FBGA |
|
S25FS128SDSNFI103Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 8WSON |
|
S29GL01GT10FHI010Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 64FBGA |
|
CY14E116N-Z30XIRochester Electronics |
NON-VOLATILE SRAM, 1MX16, 30NS P |
|
AT25XE021A-XMHN-TAdesto Technologies |
IC FLASH 2MBIT SPI 70MHZ 8TSSOP |