类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q100, FL-L |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 64Mb (8M x 8) |
内存接口: | SPI - Quad I/O, QPI |
时钟频率: | 108 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 105°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-WFDFN Exposed Pad |
供应商设备包: | 8-WSON (5x6) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS43TR16512B-125KBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 8GBIT PARALLEL 96TWBGA |
|
71T75802S150BGGIRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 119PBGA |
|
CY62128DV30LL-70SIRochester Electronics |
IC SRAM 1MBIT PARALLEL 32SOIC |
|
AS7C3513B-12JCNAlliance Memory, Inc. |
IC SRAM 512KBIT PARALLEL 44SOJ |
|
11AA040T-I/TTRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SGL WIRE SOT23-3 |
|
CY7C1386B-200GBCRochester Electronics |
512K X 36/1M X 18 PIPELINED SRAM |
|
CY14B256PA-SFXITCypress Semiconductor |
IC NVSRAM 256KBIT SPI 16SOIC |
|
CAT28C64BT13-90Rochester Electronics |
IC EEPROM 64KBIT PARALLEL 28TSOP |
|
CY7C1420SV18-250BZXIRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
AS7C3256A-20JCNTRAlliance Memory, Inc. |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
CY7C1525KV18-250BZXCRochester Electronics |
QDR SRAM, 8MX9, 0.45NS PBGA165 |
|
93C66AT-I/MSRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8MSOP |
|
93AA66AX-I/SNRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8SOIC |