类型 | 描述 |
---|---|
系列: | e•MMC™ |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NAND |
内存大小: | 128Gb (16G x 8) |
内存接口: | MMC |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 153-TFBGA |
供应商设备包: | 153-TFBGA (11.5x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
93C86CT-E/STRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 3MHZ 8TSSOP |
|
MX25V1035FZUIMacronix |
IC FLASH 1MBIT SPI/QUAD 8USON |
|
MB85RS64VYPNF-GS-BCE1Fujitsu Electronics America, Inc. |
IC FRAM 64KBIT SPI 33MHZ 8SOP |
|
CY7C1370KV25-200BZCCypress Semiconductor |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
93C86C-E/MSRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 3MHZ 8MSOP |
|
IS42SM16160K-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 54TFBGA |
|
UPD44325362BF5-E50X-FQ1-ARochester Electronics |
QDR SRAM, 1MX36, 0.45NS |
|
MR1A16ACYS35REverspin Technologies, Inc. |
IC RAM 2MBIT PARALLEL 44TSOP2 |
|
71V67703S80PFGIRochester Electronics |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
24LC512-I/ST14GRoving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 14TSSOP |
|
FM93CS56M8Rochester Electronics |
IC EEPROM 2KBIT SPI 1MHZ 8SO |
|
71T75602S150BGGRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 119PBGA |
|
CY7C2563XV18-633BZCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |