类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | NVSRAM |
技术: | NVSRAM (Non-Volatile SRAM) |
内存大小: | 256Kb (32K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 45ns |
访问时间: | 45 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 32-SOIC (0.295", 7.50mm Width) |
供应商设备包: | 32-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NSEC00K008-ATInsignis Technology Corporation |
IC FLASH 64GBIT EMMC 100BGA |
|
71V3559S85BQGRenesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
71V2576YS150PFGRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
NSEC53K016-ITInsignis Technology Corporation |
IC FLASH 16GBIT EMMC 153FBGA |
|
AT45DQ321-MWHF-TAdesto Technologies |
IC FLASH 32MBIT SPI 104MHZ 8VDFN |
|
70V658S10BCGRenesas Electronics America |
IC SRAM 2MBIT PARALLEL 256CABGA |
|
CY7C1412BV18-167BZCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
71256L35YGIRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
IS45S32400F-7TLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 86TSOP II |
|
AS4C32M16D1-5BCNAlliance Memory, Inc. |
IC DRAM 512MBIT PARALLEL 60BGA |
|
AT25QF128A-MHB-TAdesto Technologies |
IC FLASH 128MBIT SPI/QUAD 8UDFN |
|
CY62158CV30LL-70BAIRochester Electronics |
STANDARD SRAM, 1MX8, 70NS |
|
SST39VF020-70-4I-NHERoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32PLCC |