类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 2Kb (256 x 8) |
内存接口: | I²C |
时钟频率: | 400 kHz |
写周期时间 - 字,页: | 5ms |
访问时间: | 900 ns |
电压 - 电源: | 1.7V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-WFDFN Exposed Pad |
供应商设备包: | 8-TDFN (2x3) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT29F1G08ABAEAWP-AATX:EMicron Technology |
IC FLASH 1GBIT PARALLEL 48TSOP I |
|
MX25L8006EZNI-12GMacronix |
IC FLASH 8MBIT SPI 86MHZ 8WSON |
|
70V7319S133BF8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 208CABGA |
|
24LC02BHT-I/MNYRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8TDFN |
|
IS45S16320F-7BLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 54TFBGA |
|
CAT93C66XRochester Electronics |
IC EEPROM 4KBIT SPI 2MHZ 8SOIC |
|
71V3556SA166BGGI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
CY7C1061GN30-10BVXITCypress Semiconductor |
IC SRAM 16MBIT PARALLEL 48VFBGA |
|
AT34C02C-THDD-TRochester Electronics |
AT34C02 - EEPROM, 256X8, SERIAL |
|
S29GL128P90TFCR10ARochester Electronics |
IC FLASH 128MBIT PARALLEL 56TSOP |
|
AT28C010E-15TURoving Networks / Microchip Technology |
IC EEPROM 1MBIT PARALLEL 32TSOP |
|
BR24C32-WDW6TPROHM Semiconductor |
IC EEPROM 32KBIT I2C 8TSSOP |
|
IS43R86400D-5BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TFBGA |