类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR |
内存大小: | 18Mb (1M x 18) |
内存接口: | Parallel |
时钟频率: | 117 MHz |
写周期时间 - 字,页: | - |
访问时间: | 7.5 ns |
电压 - 电源: | 3.135V ~ 3.465V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-LQFP (14x20) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AS4C256M16D3B-12BANAlliance Memory, Inc. |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
MX25L12833FZNI-10GMacronix |
IC FLASH 128MBIT SPI/QUAD 8WSON |
|
DS2505P+T&RMaxim Integrated |
IC EPROM 16KBIT 1-WIRE 6TSOC |
|
25LC040XT/STRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8TSSOP |
|
25LC080A-H/SNRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 10MHZ 8SOIC |
|
CY7C1515V18-250BZCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
BR93G86FVT-3AGE2ROHM Semiconductor |
IC EEPROM 16KBIT SPI 8TSSOPB |
|
AS7C3513B-15JCNTRAlliance Memory, Inc. |
IC SRAM 512KBIT PARALLEL 44SOJ |
|
70T3589S166BF8Renesas Electronics America |
IC SRAM 2MBIT PARALLEL 208CABGA |
|
CY27C512-55JCRochester Electronics |
OTP ROM, 64KX8, 55NS PQCC32 |
|
25LC160CT-E/MNYRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 10MHZ 8TDFN |
|
RM25C512C-LSNI-BAdesto Technologies |
IC CBRAM 512KBIT SPI 20MHZ 8SOIC |
|
M24C04-FMN6TPSTMicroelectronics |
IC EEPROM 4KBIT I2C 400KHZ 8SO |