类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Not For New Designs |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR |
内存大小: | 256Mb (16M x 16) |
内存接口: | Parallel |
时钟频率: | 166 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 700 ps |
电压 - 电源: | 2.3V ~ 2.7V |
工作温度: | -40°C ~ 105°C (TA) |
安装类型: | Surface Mount |
包/箱: | 66-TSSOP (0.400", 10.16mm Width) |
供应商设备包: | 66-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
93C66A-E/STRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8TSSOP |
|
SST49LF008A-33-4C-NHERoving Networks / Microchip Technology |
IC FLASH 8MBIT PARALLEL 32PLCC |
|
RM24C128AF-7-GCSI-TAdesto Technologies |
IC EEPROM 128KBIT I2C 4WLCSP |
|
CY7C1414KV18-333BZCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
S70KS1281DPBHI023Cypress Semiconductor |
IC PSRAM 128MBIT PARALLEL 24FBGA |
|
25AA640XT-I/STRoving Networks / Microchip Technology |
IC EEPROM 64KBIT SPI 1MHZ 8TSSOP |
|
CY15E004J-SXECypress Semiconductor |
IC FRAM 4KBIT I2C 3.4MHZ 8SOIC |
|
W25Q256JVBIQWinbond Electronics Corporation |
IC FLSH 256MBIT SPI/QUAD 24TFBGA |
|
S25FS512SDSBHM210Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 24BGA |
|
MT53E384M32D2DS-053 AAT:EMicron Technology |
IC DRAM 12GBIT 1.866GHZ 200WFBGA |
|
IS61WV5128EDBLL-10BLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 36TFBGA |
|
CY7C1520V18-167BZXCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
NM93C46VM8Rochester Electronics |
EEPROM, 64X16, SERIAL, CMOS |