English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bag |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Dual Port, Synchronous |
| 内存大小: | 256Kb (16K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | 50 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 12 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 100-LQFP |
| 供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BR24C21F-E2ROHM Semiconductor |
IC EEPROM 1KBIT I2C 400KHZ 8SOP |
|
71V67603S150PFGRochester Electronics |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
CY14V256LA-BA35XITCypress Semiconductor |
IC NVSRAM 256KBIT PAR 48FBGA |
|
70V3319S166BCRenesas Electronics America |
IC SRAM 4.5MBIT PAR 256CABGA |
|
MT46H32M16LFBF-6 AT:C TRMicron Technology |
IC DRAM 512MBIT PARALLEL 60VFBGA |
|
IS64WV25616BLL-10BLA3ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 48MINIBGA |
|
IS46DR16640B-25DBLA2-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 84TWBGA |
|
MT58V1MV18DT-6Rochester Electronics |
CACHE SRAM, 1MX18, 3.5NS PQFP100 |
|
CY7C1314KV18-300BZXCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
CY7C1340F-100ACRochester Electronics |
CACHE SRAM, 128KX32, 4.5NS |
|
71V65703S80PFGIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
7142LA100CRenesas Electronics America |
IC SRAM 16KBIT PARALLEL SB48 |
|
IS62WV102416DBLL-45TLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 16MBIT PARALLEL 48TSOP I |
