类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, QDR II |
内存大小: | 9Mb (256K x 36) |
内存接口: | Parallel |
时钟频率: | 167 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.7V ~ 1.9V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 165-LBGA |
供应商设备包: | 165-FBGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MR3A16AUYS45REverspin Technologies, Inc. |
IC RAM 8MBIT PARALLEL 54TSOP2 |
|
BR93L76RFVM-WTRROHM Semiconductor |
IC EEPROM 8KBIT SPI 2MHZ 8MSOP |
|
UPD44644182AF5-E40X-FQ1Rochester Electronics |
DDR SRAM, 4MX18, 0.45NS |
|
MT25QL128ABA1EW7-0SIT TRMicron Technology |
IC FLASH 128MBIT SPI 8WPDFN |
|
IS61DDPB42M18A-400M3LISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 165LFBGA |
|
71V67602S150BGG8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
GS88036CGT-333IGSI Technology |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
IS43R86400E-6TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 66TSOP II |
|
AT45DB081E-SHN2B-TAdesto Technologies |
IC FLASH 8MBIT SPI 85MHZ 8SOIC |
|
IS61NLP102436B-200TQLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 100LQFP |
|
R1EX24016ASA00I#S0Rochester Electronics |
EEPROM, 2KX8, SERIAL |
|
MT54W1MH18JF-7.5Rochester Electronics |
QDR SRAM, 1MX18, 0.5NS PBGA165 |
|
93LC76C-E/SNRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 3MHZ 8SOIC |