类型 | 描述 |
---|---|
系列: | FL-S |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 512Mb (64M x 8) |
内存接口: | SPI - Quad I/O |
时钟频率: | 133 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 24-TBGA |
供应商设备包: | 24-BGA (6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MR256A08BCYS35Everspin Technologies, Inc. |
IC RAM 256KBIT PARALLEL 44TSOP2 |
|
CY7C1357C-100AXCTRochester Electronics |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
DS1220AD-200+Maxim Integrated |
IC NVSRAM 16KBIT PARALLEL 24EDIP |
|
MT47H128M4BT-37E:A TRMicron Technology |
IC DRAM 512MBIT PARALLEL 92FBGA |
|
CY7C1019CV33-12ZCRochester Electronics |
STANDARD SRAM, 128KX8 |
|
0436A41QLAB-5Rochester Electronics |
4MBIT (128K X 36) SRAM |
|
IS43R32400E-4BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 144LFBGA |
|
CY7C1021CV33-10BAXIRochester Electronics |
IC SRAM 1MBIT PARALLEL 48FBGA |
|
71V416S12PHGRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
24C16/SLRochester Electronics |
IC EEPROM 16KBIT I2C 8SOIC |
|
S29GL256S10FHB020Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
7025L20JGI8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 84PLCC |
|
CY7C1463AV33-133AXCRochester Electronics |
IC SRAM 36MBIT PARALLEL 100TQFP |