English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q100 |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - Mobile LPDDR4 |
| 内存大小: | 24Gb (768M x 32) |
| 内存接口: | - |
| 时钟频率: | 2.133 GHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 1.1V |
| 工作温度: | -40°C ~ 105°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 200-VFBGA |
| 供应商设备包: | 200-VFBGA (10x14.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS46TR16256BL-125KBLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 96TWBGA |
|
93AA86B-I/SNRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 3MHZ 8SOIC |
|
48L256T-I/SNRoving Networks / Microchip Technology |
IC EERAM 256KBIT SPI 66MHZ 8SOIC |
|
71V65903S80BQGRochester Electronics |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
CY62136VNLL-70ZSXARochester Electronics |
IC SRAM 2MBIT PARALLEL 44TSOP II |
|
GS81314LD19GK-933IGSI Technology |
IC SRAM 144MBIT PARALLEL 260BGA |
|
BR24T64F-WE2ROHM Semiconductor |
IC EEPROM 64KBIT I2C 400KHZ 8SOP |
|
AT24C1024BU4-UU-TRochester Electronics |
IC EEPROM 1MBIT I2C 1MHZ 8VFBGA |
|
S25FL128LAGBHB023Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 24BGA |
|
25LC320AT-H/SNRoving Networks / Microchip Technology |
IC EEPROM 32KBIT SPI 5MHZ 8SOIC |
|
W987D2HBJX6EWinbond Electronics Corporation |
IC DRAM 128MBIT PARALLEL 90VFBGA |
|
25AA080DT-I/MNYRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 10MHZ 8TDFN |
|
GS81302Q18AGD-300IGSI Technology |
IC SRAM 144MBIT PAR 165FPBGA |
