







IC NVSRAM 4MBIT PARALLEL 32EDIP
IC EEPROM 32KBIT I2C 8TDFN
LINE FILTER 250VDC/VAC 10A CHASS
WUV-240DC=UNDERVOLTAGE RELAY -
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | NVSRAM |
| 技术: | NVSRAM (Non-Volatile SRAM) |
| 内存大小: | 4Mb (512K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字,页: | 70ns |
| 访问时间: | 70 ns |
| 电压 - 电源: | 4.75V ~ 5.25V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Through Hole |
| 包/箱: | 32-DIP Module (0.600", 15.24mm) |
| 供应商设备包: | 32-EDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
S25FL064LABBHN030Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 24BGA |
|
|
MT29AZ5A3CHHWD-18AAT.84FMicron Technology |
IC FLASH RAM 4GBIT PAR 162VFBGA |
|
|
MT41K512M8DA-107 XIT:PMicron Technology |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
|
BR93H86RFJ-2CE2ROHM Semiconductor |
IC EEPROM 16KBIT SPI 2MHZ 8SOPJ |
|
|
EM6HC16EWKG-10HEtron Technology |
IC DRAM 1GBIT PARALLEL 96FBGA |
|
|
RM25C64C-LSNI-TAdesto Technologies |
IC CBRAM 64KBIT SPI 10MHZ 8SOIC |
|
|
W632GG8NB-09Winbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 78VFBGA |
|
|
CY7C1370KV25-167BZCCypress Semiconductor |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
|
AT24C02D-XHM-BRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 1MHZ 8TSSOP |
|
|
S25FL128LAGNFB013Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 8WSON |
|
|
70T653MS10BCRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 256CABGA |
|
|
AS7C31024B-10TCNTRAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 32TSOP I |
|
|
IS46R16160F-6TLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 66TSOP II |