类型 | 描述 |
---|---|
系列: | MXSMIO™ |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 64Mb (8M x 8) |
内存接口: | SPI - Quad I/O |
时钟频率: | 80 MHz |
写周期时间 - 字,页: | 100µs, 4ms |
访问时间: | - |
电压 - 电源: | 1.65V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.209", 5.30mm Width) |
供应商设备包: | 8-SOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS45S16400J-7TLA2-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 54TSOP II |
|
S29GL256S90FHSS63Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
RM24C32DS-LTAI-TAdesto Technologies |
IC CBRAM 32KBIT I2C 1MHZ 8TSSOP |
|
M24256-BWMN6TPSTMicroelectronics |
IC EEPROM 256KBIT I2C 1MHZ 8SO |
|
BR93G66F-3BGTE2ROHM Semiconductor |
IC EEPROM 4KBIT SPI 3MHZ 8SOP |
|
IS43TR82560C-15HBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 78TWBGA |
|
GS8256418GB-250IGSI Technology |
IC SRAM 288MBIT PAR 119FPBGA |
|
CAT28C65BJ-90Rochester Electronics |
IC EEPROM 64KBIT PARALLEL 28SOIC |
|
CY7C187-25VCRochester Electronics |
STANDARD SRAM, 64KX1, 25NS, CMOS |
|
24LC02BT-E/LTRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C SC70-5 |
|
93LC46B/PRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8DIP |
|
AT24CS32-MAHM-ERoving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 1MHZ 8UDFN |
|
S29GL256S10DHSS60Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |