类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 1Kb (128 x 8) |
内存接口: | I²C |
时钟频率: | 400 kHz |
写周期时间 - 字,页: | 5ms |
访问时间: | 3500 ns |
电压 - 电源: | 1.7V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
70V7339S166BCIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 256CABGA |
|
IS43LD32640B-18BPLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 168VFBGA |
|
CY7C1373BV25-117ACRochester Electronics |
ZBT SRAM, 1MX18, 7.5NS |
|
93AA66C-I/MSRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 3MHZ 8MSOP |
|
SM662GXA BDS ST617Silicon Motion |
FERRI EMMC 5GB 3D TLC [PSEUDO-SL |
|
MX29GL128FLXFI-90GMacronix |
IC FLSH 128MBIT PARALLEL 64LFBGA |
|
GS88036CGT-300IGSI Technology |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
AS7C316098A-10BINAlliance Memory, Inc. |
IC SRAM 16MBIT PARALLEL 48TFBGA |
|
IS49RL18320-125EBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 576MBIT PAR 168FCBGA |
|
S25FL128LAGBHV020Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 24BGA |
|
IS43TR81280B-107MBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 78TWBGA |
|
71V3576S150PFRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
DS2223ZRochester Electronics |
DS2223 ECONORAM |