类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 4Kb (512 x 8) |
内存接口: | SPI |
时钟频率: | 10 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | - |
电压 - 电源: | 1.8V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-TSSOP (0.173", 4.40mm Width) |
供应商设备包: | 8-TSSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS43TR16128C-15HBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
|
71256SA15PZGIRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 28TSOP |
|
93LC86BT-I/SNRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 3MHZ 8SOIC |
|
SST39WF1601-70-4I-MAQE-TRoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48WFBGA |
|
IS61LF102418B-7.5TQLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 100LQFP |
|
CY62146EV30LL-45ZSXATRochester Electronics |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
MT25QU512ABB8E12-0AUTMicron Technology |
IC FLASH 512MBIT SPI 24TPBGA |
|
MT29F2G16ABBEAHC-AIT:E TRMicron Technology |
IC FLASH 2GBIT PARALLEL 63VFBGA |
|
NM24C09LEM8Rochester Electronics |
IC EEPROM 8KBIT I2C 100KHZ 8SOIC |
|
71V3556SA166BGG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
71V321L25TFG8Renesas Electronics America |
IC SRAM 16KBIT PARALLEL 64TQFP |
|
MT41K128M8DA-107:JMicron Technology |
IC DRAM 1GBIT PARALLEL 78FBGA |
|
CY7C1564XV18-366BZXCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |