English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM |
| 内存大小: | 256Mb (32M x 8) |
| 内存接口: | Parallel |
| 时钟频率: | 143 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 5.5 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 54-TSOP (0.400", 10.16mm Width) |
| 供应商设备包: | 54-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
70T3539MS133BCI8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 256CABGA |
|
AT25M02-SSHM-TRoving Networks / Microchip Technology |
IC EEPROM 2MBIT SPI 5MHZ 8SOIC |
|
MX25L12873FM2I-10GMacronix |
IC FLASH 128MBIT SPI 104MHZ 8SOP |
|
S25FL128SAGMFBR00Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 16SOIC |
|
24AA16T-I/MNYRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 8TDFN |
|
CY7C1263KV18-400BZIRochester Electronics |
QDR SRAM, 2MX18, 0.45NS PBGA165 |
|
24AA1026T-I/SNRoving Networks / Microchip Technology |
IC EEPROM 1MBIT I2C 400KHZ 8SOIC |
|
CY7C1021CV33-12ZSXECypress Semiconductor |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
25LC160D-H/SNRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 5MHZ 8SOIC |
|
71V3577S75PFGIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
AS6C2008-55TINAlliance Memory, Inc. |
IC SRAM 2MBIT PARALLEL 32TSOP I |
|
CY7C1006B-20VCRochester Electronics |
STANDARD SRAM, 256KX4, 20NS |
|
S25FS064SDSNFV030Cypress Semiconductor |
IC FLSH 64MBIT SPI/QUAD I/O 8LGA |
