English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, SDR |
| 内存大小: | 4.5Mb (128K x 36) |
| 内存接口: | Parallel |
| 时钟频率: | 117 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 7.5 ns |
| 电压 - 电源: | 3.135V ~ 3.465V |
| 工作温度: | -40°C ~ 125°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 165-TBGA |
| 供应商设备包: | 165-TFBGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
25LC010A-E/MSRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 10MHZ 8MSOP |
|
FM24CL64B-DGTRCypress Semiconductor |
IC FRAM 64KBIT I2C 1MHZ 8TDFN |
|
24LC08BT/STRoving Networks / Microchip Technology |
IC EEPROM 8KBIT I2C 8TSSOP |
|
25C080-I/PRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 3MHZ 8DIP |
|
71V67603S150PFG8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
BR93G86FVJ-3AGTE2ROHM Semiconductor |
IC EEPROM 16K SPI 3MHZ 8TSSOP |
|
S29GL512S11FAIV13Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64BGA |
|
24AA04T-I/MNYRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 400KHZ 8TDFN |
|
HM1-6514-9Rochester Electronics |
1024 X 4 CMOS SRAM |
|
CY7C1314CV18-200BZCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
70V7319S133BFI8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 208CABGA |
|
BR93H66RF-2CE2ROHM Semiconductor |
IC EEPROM 4KBIT SPI 2MHZ 8SOP |
|
IS45S16400J-6BLA2-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PARALLEL 54TFBGA |
