类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH |
内存大小: | 512Kb (64K x 8) |
内存接口: | SPI |
时钟频率: | 104 MHz |
写周期时间 - 字,页: | 8µs, 3.5ms |
访问时间: | - |
电压 - 电源: | 1.65V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TC) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MX30LF1G18AC-XKIMacronix |
IC FLASH 1GBIT PARALLEL 63VFBGA |
|
NM24C08LNRochester Electronics |
IC EEPROM 8KBIT I2C 100KHZ 8DIP |
|
IS43TR16128A-15HBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
|
FM24C17UNRochester Electronics |
IC EEPROM 16KBIT I2C 100KHZ 8DIP |
|
23K640T-I/SNRoving Networks / Microchip Technology |
IC SRAM 64KBIT SPI 20MHZ 8SOIC |
|
CY27C512-120JCRochester Electronics |
OTP ROM, 64KX8, 120NS PQCC32 |
|
DS1258W-150Rochester Electronics |
IC NVSRAM 2MBIT PARALLEL 40EDIP |
|
MT58L64L32DT-7.5Rochester Electronics |
CACHE SRAM, 64KX32, 4NS PQFP100 |
|
BR24S64FV-WE2ROHM Semiconductor |
IC EEPROM 64KBIT I2C 8SSOPB |
|
S25FL512SAGBHAC10Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 24BGA |
|
AS6C2008A-55STINTRAlliance Memory, Inc. |
IC SRAM 2MBIT PARALLEL 32STSOP |
|
71V30S55TFG8Renesas Electronics America |
IC SRAM 8KBIT PARALLEL 64TQFP |
|
CY62148G-45SXITCypress Semiconductor |
IC SRAM 4MBIT PARALLEL 32SOIC |