类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM |
内存大小: | 256Mb (32M x 8) |
内存接口: | Parallel |
时钟频率: | 167 MHz |
写周期时间 - 字,页: | 12ns |
访问时间: | 5.4 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 54-TSOP (0.400", 10.16mm Width) |
供应商设备包: | 54-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C1480BV33-200BZXIRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
CYDM064B08-55BVXIRochester Electronics |
IC SRAM 64KBIT PARALLEL 100VFBGA |
|
BR93G76FVJ-3AGTE2ROHM Semiconductor |
IC EEPROM 8K SPI 3MHZ 8TSSOP |
|
IS46R16320E-6BLA2-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TFBGA |
|
S25FL127SABMFB100Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 8SOIC |
|
CY7C1399B-15ZXCTRochester Electronics |
CACHE SRAM, 32KX8, 15NS PDSO28 |
|
RMLV0414EGSB-4S2#AA0Rochester Electronics |
STANDARD SRAM, 256KX16, 45NS |
|
71V3556SA133BQGIRenesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
CY14B116N-ZSP45XITCypress Semiconductor |
IC NVSRAM 16MBIT PAR 54TSOP II |
|
IS43TR16256B-107MBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 96TWBGA |
|
N01L63W2AT25IRochester Electronics |
STANDARD SRAM, 64KX16, 70NS |
|
24LC02B-E/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
S25FL256SAGBHVC00Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 24BGA |