English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q100, HyperFlash™ KS |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NOR |
| 内存大小: | 128Mb (16M x 8) |
| 内存接口: | Parallel |
| 时钟频率: | 166 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 96 ns |
| 电压 - 电源: | 1.7V ~ 1.95V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 24-VBGA |
| 供应商设备包: | 24-FBGA (6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
S25FS512SAGMFI013Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 16SOIC |
|
71V3579SA75BQGRochester Electronics |
IC SRAM 4.5MBIT PAR 165CABGA |
|
25LC080CT-I/STRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 10MHZ 8TSSOP |
|
SST39VF1601C-70-4C-MAQERoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48WFBGA |
|
CAT93C46VP2I-GT3Rochester Electronics |
IC EEPROM 1KBIT SPI 2MHZ 8TDFN |
|
70V658S12BCI8Renesas Electronics America |
IC SRAM 2MBIT PARALLEL 256CABGA |
|
IS45S16160G-7BLA2-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 54TFBGA |
|
CY14V101LA-BA25XIRochester Electronics |
IC NVSRAM 1MBIT PARALLEL 48FBGA |
|
AT28C256F-15TURoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28TSOP |
|
CY62128DV30L-55ZIRochester Electronics |
STANDARD SRAM, 128KX8 |
|
93LC56T/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8SOIC |
|
BR93G66FVM-3GTTRROHM Semiconductor |
IC EEPROM 4KBIT SPI 3MHZ 8MSOP |
|
AS7C1024B-12JCNAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 32SOJ |
