类型 | 描述 |
---|---|
系列: | MXSMIO™ |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 2Mb (256K x 8) |
内存接口: | SPI - Quad I/O |
时钟频率: | 80 MHz |
写周期时间 - 字,页: | 50µs, 10ms |
访问时间: | - |
电压 - 电源: | 2.3V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-UFDFN Exposed Pad |
供应商设备包: | 8-USON (2x3) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
25AA020A-I/PRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 10MHZ 8DIP |
|
71V67703S75BGGIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
CAT25256XI-T2Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 256KBIT SPI 8SOIC |
|
SST26VF016B-80E/SNRoving Networks / Microchip Technology |
IC FLASH 16MBIT SPI/QUAD 8SOIC |
|
S29NS512P0SBJW000Rochester Electronics |
FLASH, 32MX16, 80NS, PBGA64 |
|
S29GL01GT12TFVV13Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 56TSOP |
|
AS4C16M16D1A-5TINTRAlliance Memory, Inc. |
IC DRAM 256MBIT PAR 66TSOP II |
|
S29NS512P0PBJW003Rochester Electronics |
FLASH, 32MX16, 80NS, PBGA64 |
|
S29GL512T13TFNV23Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 56TSOP |
|
AS4C8M16D1-5BINTRAlliance Memory, Inc. |
IC DRAM 128MBIT PARALLEL 60TFBGA |
|
BR24C04-10TU-1.8ROHM Semiconductor |
IC EEPROM 4KBIT I2C 8TSSOP |
|
CY62162G30-45BGXITCypress Semiconductor |
IC SRAM 16MBIT PARALLEL 119PBGA |
|
MX25L12855FXCI-10GMacronix |
IC FLASH 128MBIT SPI 24CSPBGA |