类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EPROM |
技术: | EPROM - OTP |
内存大小: | 4Mb (512K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | 150 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 32-LCC (J-Lead) |
供应商设备包: | 32-PLCC (14x11.46) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C0241-15ACRochester Electronics |
DUAL-PORT SRAM, 4KX18, 15NS |
|
RM24EP64C-BSNC-BAdesto Technologies |
IC CBRAM 64KBIT I2C 750KHZ 8SOIC |
|
MT46H64M16LFBF-5 IT:B TRMicron Technology |
IC DRAM 1GBIT PARALLEL 60VFBGA |
|
CY7C1514AV18-167BZCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
SST39LF200A-55-4C-EKERoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 48TSOP |
|
CY7C195-15VCTRochester Electronics |
STANDARD SRAM, 64KX4, 15NS |
|
S29GL256P10FFI022Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
UPD44645362AF5-E40-FQ1Rochester Electronics |
STANDARD SRAM, 2MX36, 0.45NS |
|
IS43LR16800G-6BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 60TFBGA |
|
93AA56/PRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8DIP |
|
MT54W1MH18BF-5Rochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
AS4C8M16MSA-6BINAlliance Memory, Inc. |
IC DRAM 128MBIT PARALLEL 54FBGA |
|
AS7C34098A-10TCNTRAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 44TSOP2 |