类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | NVSRAM |
技术: | NVSRAM (Non-Volatile SRAM) |
内存大小: | 1Mb (128K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 20ns |
访问时间: | 20 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 44-TSOP (0.400", 10.16mm Width) |
供应商设备包: | 44-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BR93C46-10TU-2.7ROHM Semiconductor |
IC EEPROM 1KBIT SPI 2MHZ 8TSSOP |
|
24LC32A/SMRoving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 8SOIJ |
|
CY7C1150KV18-400BZXIRochester Electronics |
DDR SRAM, 512KX36, 0.45NS PBGA16 |
|
MT29F64G08AECDBJ4-6ITR:DMicron Technology |
IC FLASH 64GBIT PARALLEL 132VBGA |
|
CY7C1021CV33-12ZSXETRochester Electronics |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
93C46B-E/STRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8TSSOP |
|
W971GG6SB-25Winbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 84WBGA |
|
25LC160CT-E/MSRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 10MHZ 8MSOP |
|
71V2556S166PFGIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
IS46R16160D-5BLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 60TFBGA |
|
IS25LP032D-JLLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 32MBIT SPI/QUAD 8WSON |
|
IS42S16160J-7TLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
AS7C31025B-15TJCNAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 32SOJ |