类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | NVSRAM |
技术: | NVSRAM (Non-Volatile SRAM) |
内存大小: | 64Kb (8K x 8) |
内存接口: | SPI |
时钟频率: | 40 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 105°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
23A256-I/STRoving Networks / Microchip Technology |
IC SRAM 256KBIT SPI 20MHZ 8TSSOP |
|
FM24V02-GFlip Electronics |
IC FRAM 256KBIT I2C 3.4MHZ 8SOIC |
|
GD25LQ16CTIGRGigaDevice |
IC FLASH 16MBIT SPI/QUAD 8SOP |
|
MT58V512V32FT-8.5Rochester Electronics |
CACHE SRAM, 512KX32, 8.5NS PQFP1 |
|
CY27C256-120PIRochester Electronics |
IC EPROM 256KBIT PARALLEL 28DIP |
|
AS7C1026B-15JINAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 44SOJ |
|
CY15B064J-SXECypress Semiconductor |
IC FRAM 64KBIT I2C 1MHZ 8SOIC |
|
IS61LPS25636A-200B3LI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 9MBIT PARALLEL 165TFBGA |
|
S29GL512T10TFI010Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 56TSOP |
|
S70FS01GSDSBHB213Cypress Semiconductor |
IC FLSH 1GBIT SPI/QUAD I/O 24BGA |
|
MX25UM51245GXDI00Macronix |
IC FLASH 512MBIT SPI/QUAD 24BGA |
|
93LC56T-I/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8SOIC |
|
IS46R16160F-6BLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 60TFBGA |