类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 8Kb (1K x 8) |
内存接口: | SPI |
时钟频率: | 10 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | - |
电压 - 电源: | 2.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
供应商设备包: | 8-MSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SST39SF020A-70-4I-WHERoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32TSOP |
|
R1LP0408DSP-7SI#S0Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 32SOP |
|
IS43TR16128DL-107MBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
|
DS1249W-150Rochester Electronics |
IC NVSRAM 2MBIT PARALLEL 32EDIP |
|
11AA161T-I/TTRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SGL WIRE SOT23 |
|
MTFC64GAPALBH-AIT TRMicron Technology |
IC FLASH 512GBIT MMC 153TFBGA |
|
MT53D512M32D2DS-053 AAT:D TRMicron Technology |
IC DRAM 16GBIT 1866MHZ 200WFBGA |
|
CY7C1414BV18-200BZIRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
BR93L46RFV-WE2ROHM Semiconductor |
IC EEPROM 1KBIT SPI 2MHZ 8SSOPB |
|
70V631S10BCRenesas Electronics America |
IC SRAM 4.5MBIT PAR 256CABGA |
|
MR0A08BMA35REverspin Technologies, Inc. |
IC RAM 1MBIT PARALLEL 48FBGA |
|
UPD44165182BF5-E33-EQ3-ARochester Electronics |
QDR SRAM, 1MX18, 0.45NS |
|
24LC01B/PRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8DIP |