类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Asynchronous |
内存大小: | 64Kb (4K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 20ns |
访问时间: | 20 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 84-LCC (J-Lead) |
供应商设备包: | 84-PLCC (29.31x29.31) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT45DB641E-MHN-TAdesto Technologies |
IC FLASH 64MBIT SPI 85MHZ 8UDFN |
|
CY27H512-45JCRochester Electronics |
OTP ROM, 64KX8, 45NS PQCC32 |
|
71V3576S150PFIRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
GD25VQ40CTIGGigaDevice |
IC FLASH 4MBIT SPI/QUAD I/O 8SOP |
|
S29GL512T11DHV020Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64FBGA |
|
GVT71128E36T-8Rochester Electronics |
IC SRAM 4MBIT 100MHZ |
|
S29GL064N90TFI020Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 56TSOP |
|
IS43LR32160B-6BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 90TFBGA |
|
BR25L080FV-WE2ROHM Semiconductor |
IC EEPROM 8KBIT SPI 5MHZ 8SSOPB |
|
25AA640A-I/SNRoving Networks / Microchip Technology |
IC EEPROM 64KBIT SPI 10MHZ 8SOIC |
|
71T75802S166PFGRochester Electronics |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
N01S830HAT22ISanyo Semiconductor/ON Semiconductor |
IC SRAM 1MBIT SPI 20MHZ 8TSSOP |
|
CY7C1314BV18-250BZXCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |