English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Dual Port, Asynchronous |
| 内存大小: | 32Kb (4K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 15 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 68-LCC (J-Lead) |
| 供应商设备包: | 68-PLCC (24.23x24.23) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS45S32200L-6TLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 86TSOP II |
|
AT25010B-SSHL-TRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 20MHZ 8SOIC |
|
CY62146EV30LL-45BVXICypress Semiconductor |
IC SRAM 4MBIT PARALLEL 48VFBGA |
|
CY7C199D-10ZXIRochester Electronics |
IC SRAM 256KBIT PAR 28TSOP I |
|
CY7C25702KV18-550BZXIRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
70V3569S4BFRenesas Electronics America |
IC SRAM 576KBIT PAR 208CABGA |
|
S29GL256S90FHSS33Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
NV24C16DTVLT3GSanyo Semiconductor/ON Semiconductor |
IC EEPROM 16KBIT I2C 1MHZ 8TSSOP |
|
R1WV6416RBG-7SR#B0Rochester Electronics |
STANDARD SRAM, 4MX16, 70NS |
|
24LC256T-I/MNYRoving Networks / Microchip Technology |
IC EEPROM 256KBIT I2C 8TDFN |
|
GS832236AGD-333IGSI Technology |
IC SRAM 36MBIT PARALLEL 165FPBGA |
|
IS61QDP2B41M36A-400M3LISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 165LFBGA |
|
70T3319S166BC8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 256CABGA |
