类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 256Kb (32K x 8) |
内存接口: | I²C |
时钟频率: | 1 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | 500 ns |
电压 - 电源: | 1.8V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS43R32160D-5BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 144LFBGA |
|
47C16T-E/SNRoving Networks / Microchip Technology |
IC EERAM 16KBIT I2C 1MHZ 8SOIC |
|
FM25V20A-DGQTRCypress Semiconductor |
IC FRAM 2MBIT SPI 40MHZ 8TDFN |
|
CAT24C08LIRochester Electronics |
CAT24C08 - 8-KBIT I2C SERIAL EEP |
|
IS46R16160F-6TLA2-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 66TSOP II |
|
TH58BVG2S3HBAI4Toshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 4GBIT 63TFBGA |
|
24AA64T-E/STRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 8TSSOP |
|
CYD04S72V-133BBIRochester Electronics |
IC SRAM 4MBIT PARALLEL 484FBGA |
|
AS7C34096A-8TINTRAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 44TSOP2 |
|
AT45DB081E-SHN-TAdesto Technologies |
IC FLASH 8MBIT SPI 85MHZ 8SOIC |
|
IS61WV5128BLL-10BLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 36TFBGA |
|
W631GU6MB15I TRWinbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 96VFBGA |
|
CY7C14141KV18-250BZXCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |