类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
内存类型: | - |
内存格式: | - |
技术: | - |
内存大小: | - |
内存接口: | - |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | - |
工作温度: | - |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
7164S20YGIRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 28SOJ |
|
IS43TR16128CL-15HBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
|
24LC04BHT-E/OTRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C SOT23-5 |
|
71V3577S85BGGRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
MT25QL128ABA1EW9-0SIT TRMicron Technology |
IC FLASH 128MBIT SPI 8WPDFN |
|
MT25QL512ABB8ESFE01-2SIT TRMicron Technology |
IC FLASH 512MBIT SPI 133MHZ 16SO |
|
HN27C256AG15Rochester Electronics |
UV EPROM, 32KX8, 150NS |
|
25LC1024T-E/SMRoving Networks / Microchip Technology |
IC EEPROM 1MBIT SPI 20MHZ 8SOIJ |
|
CY7C1089DV33-12BAXIRochester Electronics |
STANDARD SRAM, 8MX8, 12NS |
|
UPD44325184BF5-E40-FQ1Rochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
AS6C6264-55SINAlliance Memory, Inc. |
IC SRAM 64KBIT PARALLEL 28SOP |
|
DS1249AB-70#Maxim Integrated |
IC NVSRAM 2MBIT PARALLEL 32EDIP |
|
71V65803S100PFG8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |