English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bag |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, SDR |
| 内存大小: | 18Mb (512K x 36) |
| 内存接口: | Parallel |
| 时钟频率: | 167 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 3.4 ns |
| 电压 - 电源: | 3.135V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 100-LQFP |
| 供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BR93A86RFVT-WME2ROHM Semiconductor |
IC EEPROM 16KBIT SPI 8TSSOPB |
|
IS42S86400F-6TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 54TSOP II |
|
71V67803S133PFGRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
S26KS512SDABHV030Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 24FBGA |
|
CAV25020YE-GT3Rochester Electronics |
IC EEPROM 2KBIT SPI 10MHZ 8TSSOP |
|
CY7C1339G-133AXCCypress Semiconductor |
IC SRAM 4MBIT PARALLEL 100TQFP |
|
IS62WV5128BLL-55QLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 32SOP |
|
MT58L512L18FS-8.5Rochester Electronics |
CACHE SRAM, 512KX18, 8.5NS PQFP1 |
|
CAT93C56VP2I-GT3Rochester Electronics |
IC EEPROM 2KBIT SPI 2MHZ 8TDFN |
|
93LC56C-I/PRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 3MHZ 8DIP |
|
CY7C1021CV33-12VCRochester Electronics |
IC SRAM 1MBIT PARALLEL 44SOJ |
|
CY7C2570KV18-500BZCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
S-25C080A0I-T8T1GABLIC U.S.A. Inc. |
IC EEPROM 8KBIT SPI 5MHZ 8TSSOP |
