类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 16Kb (2K x 8) |
内存接口: | I²C |
时钟频率: | 100 kHz |
写周期时间 - 字,页: | 10ms |
访问时间: | 3.5 µs |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS43TR16256BL-125KBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 96TWBGA |
|
LE25FU406CMA-TLM-HRochester Electronics |
4M BIT (512K X 8) SERIAL FLASH M |
|
IS25WP080D-JNLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 8MBIT SPI/QUAD 8SOIC |
|
AT24CS04-XHM-TRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 1MHZ 8TSSOP |
|
CAT25160LI-GRochester Electronics |
IC EEPROM 16KBIT SPI 20MHZ 8DIP |
|
23LC512-I/STRoving Networks / Microchip Technology |
IC SRAM 512KBIT SPI/QUAD 8TSSOP |
|
BR25H020FJ-2CE2ROHM Semiconductor |
IC EEPROM 2KBIT SPI 10MHZ 8SOPJ |
|
IS43TR16640CL-107MBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 96TWBGA |
|
SST39LF801C-55-4C-MAQERoving Networks / Microchip Technology |
IC FLASH 8MBIT PARALLEL 48WFBGA |
|
71V3558SA133BQGI8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
CY7C164-35VCRochester Electronics |
STANDARD SRAM, 16KX4, 35NS, CMOS |
|
MX25V2035FZUIMacronix |
IC FLASH 2MBIT SPI/QUAD 8USON |
|
AS7C1024B-15TJCNTRAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 32TSOP |