类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Synchronous |
内存大小: | 4.5Mb (256K x 18) |
内存接口: | Parallel |
时钟频率: | 166 MHz |
写周期时间 - 字,页: | - |
访问时间: | 3.6 ns |
电压 - 电源: | 2.4V ~ 2.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 208-LFBGA |
供应商设备包: | 208-CABGA (15x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT29F1G08ABAFAWP-ITE:F TRMicron Technology |
IC FLASH 1GBIT PARALLEL 48TSOP I |
|
S27KL0641DABHB030Cypress Semiconductor |
IC PSRAM 64MBIT PARALLEL 24FBGA |
|
CY15B104QN-50LPXICypress Semiconductor |
IC FRAM 4MBIT SPI 50MHZ 8GQFN |
|
NM24C65ULEM8Rochester Electronics |
IC EEPROM 64KBIT I2C 8SOIC |
|
BR24T512FJ-3AME2ROHM Semiconductor |
IC EEPROM 512KBIT I2C 1MHZ 8SOPJ |
|
AM27S35/BLARochester Electronics |
AM27S35 - OTP ROM, 1KX8 |
|
GS8662Q18BGD-357IGSI Technology |
IC SRAM 72MBIT PARALLEL 165FPBGA |
|
S29GL01GS10FAI013Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 64FBGA |
|
71V2556SA100BGRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
S25FL256SAGMFAG10Rochester Electronics |
IC FLASH 256MBIT SPI/QUAD 16SOIC |
|
LE25U20AFD-AHSanyo Semiconductor/ON Semiconductor |
IC FLASH 2MBIT SPI 30MHZ 8VSOIC |
|
CY7C1512V18-250BZXIRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
MT25QL01GBBB1EW9-0SIT TRMicron Technology |
IC FLASH 1GBIT SPI 133MHZ 8WPDFN |