类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 4Kb (512 x 8) |
内存接口: | I²C |
时钟频率: | 400 kHz |
写周期时间 - 字,页: | 5ms |
访问时间: | 900 ns |
电压 - 电源: | 2.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOP-J |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS42VM32200M-75BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PARALLEL 90TFBGA |
|
HYB25D512800CE-5 |
IC DRAM 512MBIT PAR 66TSOP II |
|
71V65603S133BGGI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
34LC02-I/PRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 1MHZ 8DIP |
|
RMLV0816BGSD-4S2#HA1Renesas Electronics America |
IC SRAM 8MBIT PARALLEL 52TSOP II |
|
34AA02T-E/MNYRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8TDFN |
|
S29GL128S90TFA020Rochester Electronics |
IC FLASH 128MBIT PARALLEL 56TSOP |
|
NV24C04UVLT2GSanyo Semiconductor/ON Semiconductor |
IC EEPROM 4KBIT I2C 1MHZ US8 |
|
71V65903S75PFGRochester Electronics |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
SST26WF016BT-104I/MFRoving Networks / Microchip Technology |
IC FLASH 16MBIT SPI/QUAD 8WDFN |
|
93C46BT-I/OTRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ SOT23-6 |
|
CAT25040PRochester Electronics |
IC EEPROM 4KBIT SPI 10MHZ 8DIP |
|
71V016SA10BFGRochester Electronics |
IC SRAM 1MBIT PARALLEL 48FBGA |